Study of performance degradations in DC-DC converter due to hot carrier stress by simulation

    Authors

    C. Yu; L. Jiang;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    The hot carrier effects on the 0.25 mu m high voltage LDMOS has been examined by the accelerated stress experiment. Although the model parameters changed slightly, the switching performances degraded significantly, which have been simulated with the compact models extracted from the test devices by ICCAP. A full bridge DC-DC converter with the compact models was proposed in Cadence SpectreRF. The simulated results show that the efficiency of the full bridge DC-DC converter degraded significantly due to the hot carrier effects.

    Journal Title

    Microelectronics Reliability

    Volume

    46

    Issue/Number

    9-11

    Publication Date

    1-1-2006

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    1840

    Last Page

    1843

    WOS Identifier

    WOS:000240776100078

    ISSN

    0026-2714

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