Title

Study of electrical stress effect on SiGe HBT low-noise amplifier performance by simulation

Authors

Authors

C. Z. Yu; J. S. Yuan; J. Shen;E. J. Xiao

Comments

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Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

HBT; hot-carriers; low-noise amplifier; SiGe; S-parameters; VBIC model; HETEROJUNCTION BIPOLAR-TRANSISTORS; DEGRADATION; RF; RELIABILITY; TECHNOLOGY; PARAMETER; CIRCUIT; MODEL; Engineering, Electrical & Electronic; Physics, Applied

Abstract

This paper investigates the hot-carrier-induced performance degradation in a cascode low-noise amplifier using SiGe heterojunction bipolar transistors. Changes in device characteristics due to accelerated hot-carrier stress are examined experimentally. The vertical bipolar inter-company (VBIC) model parameters extracted from measured device data before and after stress are used in Cadence SpectreRF simulation to evaluate the circuit performance degradation.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

6

Issue/Number

4

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

550

Last Page

555

WOS Identifier

WOS:000242691300008

ISSN

1530-4388

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