Study of electrical stress effect on SiGe HBT low-noise amplifier performance by simulation

    Authors

    C. Z. Yu; J. S. Yuan; J. Shen;E. J. Xiao

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    HBT; hot-carriers; low-noise amplifier; SiGe; S-parameters; VBIC model; HETEROJUNCTION BIPOLAR-TRANSISTORS; DEGRADATION; RF; RELIABILITY; TECHNOLOGY; PARAMETER; CIRCUIT; MODEL; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    This paper investigates the hot-carrier-induced performance degradation in a cascode low-noise amplifier using SiGe heterojunction bipolar transistors. Changes in device characteristics due to accelerated hot-carrier stress are examined experimentally. The vertical bipolar inter-company (VBIC) model parameters extracted from measured device data before and after stress are used in Cadence SpectreRF simulation to evaluate the circuit performance degradation.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    6

    Issue/Number

    4

    Publication Date

    1-1-2006

    Document Type

    Article

    Language

    English

    First Page

    550

    Last Page

    555

    WOS Identifier

    WOS:000242691300008

    ISSN

    1530-4388

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