Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN
Abbreviated Journal Title
Appl. Phys. Lett.
MG-DOPED GAN; IMPURITIES; Physics, Applied
Electron-irradiation increase of nonequilibrium carrier lifetime was studied as a function of hole concentration in Mg-doped GaN. Temperature-dependent cathodoluminescence (CL) studies yielded activation energies of 344, 326, 237, and 197 meV for samples with hole concentrations of 2x10(16), 9x10(16), 3x10(18), and 7x10(18) cm(-3), respectively. The systematic decay of activation energy with carrier concentration was found to be consistent with Mg acceptors, indicating the involvement of the latter levels in irradiation-induced lifetime changes. (c) 2007 American Institute of Physics.
Applied Physics Letters
"Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN" (2007). Faculty Bibliography 2000s. 7372.