Title

Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN

Authors

Authors

O. Lopatiuk-Tirpak; L. Chernyak; Y. L. Wang; F. Ren; S. J. Pearton; K. Gartsman;Y. Feldman

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

MG-DOPED GAN; IMPURITIES; Physics, Applied

Abstract

Electron-irradiation increase of nonequilibrium carrier lifetime was studied as a function of hole concentration in Mg-doped GaN. Temperature-dependent cathodoluminescence (CL) studies yielded activation energies of 344, 326, 237, and 197 meV for samples with hole concentrations of 2x10(16), 9x10(16), 3x10(18), and 7x10(18) cm(-3), respectively. The systematic decay of activation energy with carrier concentration was found to be consistent with Mg acceptors, indicating the involvement of the latter levels in irradiation-induced lifetime changes. (c) 2007 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

90

Issue/Number

17

Publication Date

1-1-2007

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000246568600066

ISSN

0003-6951

Share

COinS