Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
MG-DOPED GAN; IMPURITIES; Physics, Applied
Abstract
Electron-irradiation increase of nonequilibrium carrier lifetime was studied as a function of hole concentration in Mg-doped GaN. Temperature-dependent cathodoluminescence (CL) studies yielded activation energies of 344, 326, 237, and 197 meV for samples with hole concentrations of 2x10(16), 9x10(16), 3x10(18), and 7x10(18) cm(-3), respectively. The systematic decay of activation energy with carrier concentration was found to be consistent with Mg acceptors, indicating the involvement of the latter levels in irradiation-induced lifetime changes.
Journal Title
Applied Physics Letters
Volume
90
Issue/Number
17
Publication Date
1-1-2007
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Lopatiuk-Tirpak, O.; Chernyak, L.; Wang, Y. L.; Ren, F.; Pearton, S. J.; Gartsman, K.; and Feldman, Y., "Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN" (2007). Faculty Bibliography 2000s. 7372.
https://stars.library.ucf.edu/facultybib2000/7372
Comments
Authors: contact us about adding a copy of your work at STARS@ucf.edu
"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."