Authors

O. Lopatiuk-Tirpak; G. Nootz; E. Flitsiyan; L. Chernyak; L. J. Mandalapu; Z. Yang; J. L. Liu; K. Gartsman;A. Osinsky

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

P-TYPE ZNO; Physics, Applied

Abstract

The effects of solid-state electron injection on the peak amplitude and decay time of photosignal in a ZnO-based homojunction UV photodiode were studied using temporal photoresponse measurements under femtosecond pulses of 355 nm radiation. The injection of about 50 C of charge, carried out by applying forward bias to the junction, resulted in a nearly twofold increase of the peak photoresponse and a corresponding increase of the decay constant. Both observations are shown to be a consequence of electron trapping. The long-term stability of the induced changes is also discussed.

Journal Title

Applied Physics Letters

Volume

91

Issue/Number

4

Publication Date

1-1-2007

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000248345500055

ISSN

0003-6951

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