Numerical and Experimental Investigation of Single Event Effects in SOI Lateral Power MOSFETs
Abbreviated Journal Title
IEEE Trans. Nucl. Sci.
Heavy ions; LDMOS; power devices; radiation effects; single event; burnout; single event gate rupture; HEAVY-ION IRRADIATION; SEGR FAILURE; TECHNOLOGY; DMOSFETS; DAMAGE; Engineering, Electrical & Electronic; Nuclear Science & Technology
150 V SOI lateral power MOSFETs were designed and fabricated with features intended to provide hardness against SEB and SEGR. The response of SOI power MOSFETs to heavy ion radiation was investigated both experimentally and using TCAD simulations. These power MOSFETs demonstrated an electrical performance figure of merit Q(GD) x R-DSON considerably improved over state of the art commercial trench VDMOS and rad-hard planar VDMOS devices, and survived heavy ion irradiation at the full V-DS biasing of 150 V and full V-GS biasing of -16 V simultaneously.
Ieee Transactions on Nuclear Science
Article; Proceedings Paper
"Numerical and Experimental Investigation of Single Event Effects in SOI Lateral Power MOSFETs" (2011). Faculty Bibliography 2010s. 1895.