Title

Numerical and Experimental Investigation of Single Event Effects in SOI Lateral Power MOSFETs

Authors

Authors

P. M. Shea;Z. J. Shen

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Nucl. Sci.

Keywords

Heavy ions; LDMOS; power devices; radiation effects; single event; burnout; single event gate rupture; HEAVY-ION IRRADIATION; SEGR FAILURE; TECHNOLOGY; DMOSFETS; DAMAGE; Engineering, Electrical & Electronic; Nuclear Science & Technology

Abstract

150 V SOI lateral power MOSFETs were designed and fabricated with features intended to provide hardness against SEB and SEGR. The response of SOI power MOSFETs to heavy ion radiation was investigated both experimentally and using TCAD simulations. These power MOSFETs demonstrated an electrical performance figure of merit Q(GD) x R-DSON considerably improved over state of the art commercial trench VDMOS and rad-hard planar VDMOS devices, and survived heavy ion irradiation at the full V-DS biasing of 150 V and full V-GS biasing of -16 V simultaneously.

Journal Title

Ieee Transactions on Nuclear Science

Volume

58

Issue/Number

6

Publication Date

1-1-2011

Document Type

Article; Proceedings Paper

DOI Link

http://dx.doi.org/10.1109/tns.2011.2172956

Language

English

First Page

2739

Last Page

2747

WOS Identifier

WOS:000301287400027

ISSN

0018-9499

Recommended Citation

"Numerical and Experimental Investigation of Single Event Effects in SOI Lateral Power MOSFETs" (2011). Faculty Bibliography 2010s. 1895.
https://stars.library.ucf.edu/facultybib2010/1895