Numerical and Experimental Investigation of Single Event Effects in SOI Lateral Power MOSFETs

    Authors

    P. M. Shea;Z. J. Shen

    Comments

    Authors: contact us about adding a copy of your work at [email protected]

    Abbreviated Journal Title

    IEEE Trans. Nucl. Sci.

    Keywords

    Heavy ions; LDMOS; power devices; radiation effects; single event; burnout; single event gate rupture; HEAVY-ION IRRADIATION; SEGR FAILURE; TECHNOLOGY; DMOSFETS; DAMAGE; Engineering, Electrical & Electronic; Nuclear Science & Technology

    Abstract

    150 V SOI lateral power MOSFETs were designed and fabricated with features intended to provide hardness against SEB and SEGR. The response of SOI power MOSFETs to heavy ion radiation was investigated both experimentally and using TCAD simulations. These power MOSFETs demonstrated an electrical performance figure of merit Q(GD) x R-DSON considerably improved over state of the art commercial trench VDMOS and rad-hard planar VDMOS devices, and survived heavy ion irradiation at the full V-DS biasing of 150 V and full V-GS biasing of -16 V simultaneously.

    Journal Title

    Ieee Transactions on Nuclear Science

    Volume

    58

    Issue/Number

    6

    Publication Date

    1-1-2011

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    2739

    Last Page

    2747

    WOS Identifier

    WOS:000301287400027

    ISSN

    0018-9499

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