Investigation of LOCOS- and Polysilicon-Bound Diodes for Robust Electrostatic Discharge (ESD) Applications
Abbreviated Journal Title
IEEE Trans. Electron Devices
Diodes; electrostatic discharge (ESD); failure current; ON-resistance; Engineering, Electrical & Electronic; Physics, Applied
In this paper, the current-carrying and voltage-clamping capabilities of LOCal Oxidation of Silicon (LOCOS)and polysilicon-bound diodes are first investigated. Comparison of these capabilities leads to the conclusion that the polysilicon-bound diode is more suited for electrostatic discharge (ESD) protection applications. Then, to achieve an optimal diode structure for ESD applications, the effects of the cathode/anode length, cathode/anode width, polysilicon width, finger number, terminal connection, and metal layout on the polysilicon-bound diode's ESD robustness are studied and discussed in detail.
Ieee Transactions on Electron Devices
"Investigation of LOCOS- and Polysilicon-Bound Diodes for Robust Electrostatic Discharge (ESD) Applications" (2010). Faculty Bibliography 2010s. 433.