Title
Investigation of LOCOS- and Polysilicon-Bound Diodes for Robust Electrostatic Discharge (ESD) Applications
Abbreviated Journal Title
IEEE Trans. Electron Devices
Keywords
Diodes; electrostatic discharge (ESD); failure current; ON-resistance; Engineering, Electrical & Electronic; Physics, Applied
Abstract
In this paper, the current-carrying and voltage-clamping capabilities of LOCal Oxidation of Silicon (LOCOS)and polysilicon-bound diodes are first investigated. Comparison of these capabilities leads to the conclusion that the polysilicon-bound diode is more suited for electrostatic discharge (ESD) protection applications. Then, to achieve an optimal diode structure for ESD applications, the effects of the cathode/anode length, cathode/anode width, polysilicon width, finger number, terminal connection, and metal layout on the polysilicon-bound diode's ESD robustness are studied and discussed in detail.
Journal Title
Ieee Transactions on Electron Devices
Volume
57
Issue/Number
4
Publication Date
1-1-2010
Document Type
Article
Language
English
First Page
814
Last Page
819
WOS Identifier
ISSN
0018-9383
Recommended Citation
"Investigation of LOCOS- and Polysilicon-Bound Diodes for Robust Electrostatic Discharge (ESD) Applications" (2010). Faculty Bibliography 2010s. 433.
https://stars.library.ucf.edu/facultybib2010/433
Comments
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