Investigation of LOCOS- and Polysilicon-Bound Diodes for Robust Electrostatic Discharge (ESD) Applications

    Authors

    Y. Li; J. J. Liou; J. E. Vinson;L. N. Zhang

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Diodes; electrostatic discharge (ESD); failure current; ON-resistance; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    In this paper, the current-carrying and voltage-clamping capabilities of LOCal Oxidation of Silicon (LOCOS)and polysilicon-bound diodes are first investigated. Comparison of these capabilities leads to the conclusion that the polysilicon-bound diode is more suited for electrostatic discharge (ESD) protection applications. Then, to achieve an optimal diode structure for ESD applications, the effects of the cathode/anode length, cathode/anode width, polysilicon width, finger number, terminal connection, and metal layout on the polysilicon-bound diode's ESD robustness are studied and discussed in detail.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    57

    Issue/Number

    4

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    814

    Last Page

    819

    WOS Identifier

    WOS:000275998500011

    ISSN

    0018-9383

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