Title

Investigation of LOCOS- and Polysilicon-Bound Diodes for Robust Electrostatic Discharge (ESD) Applications

Authors

Authors

Y. Li; J. J. Liou; J. E. Vinson;L. N. Zhang

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

Diodes; electrostatic discharge (ESD); failure current; ON-resistance; Engineering, Electrical & Electronic; Physics, Applied

Abstract

In this paper, the current-carrying and voltage-clamping capabilities of LOCal Oxidation of Silicon (LOCOS)and polysilicon-bound diodes are first investigated. Comparison of these capabilities leads to the conclusion that the polysilicon-bound diode is more suited for electrostatic discharge (ESD) protection applications. Then, to achieve an optimal diode structure for ESD applications, the effects of the cathode/anode length, cathode/anode width, polysilicon width, finger number, terminal connection, and metal layout on the polysilicon-bound diode's ESD robustness are studied and discussed in detail.

Journal Title

Ieee Transactions on Electron Devices

Volume

57

Issue/Number

4

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

814

Last Page

819

WOS Identifier

WOS:000275998500011

ISSN

0018-9383

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