Title

Effect of thin silicon dioxide layers on resonant frequency in infrared metamaterials

Authors

Authors

D. J. Shelton; D. W. Peters; M. B. Sinclair; I. Brener; L. K. Warne; L. I. Basilio; K. R. Coffey;G. D. Boreman

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Opt. Express

Keywords

DESIGN; FILMS; Optics

Abstract

Infrared metamaterials fabricated on semiconductor substrates exhibit a high degree of sensitivity to very thin (as small as 2 nm) layers of low permittivity materials between the metallic elements and the underlying substrate. We have measured the resonant frequencies of split ring resonators and square loops fabricated on Si wafers with silicon dioxide thicknesses ranging from 0 to 10 nm. Resonance features blue shift with increasing silicon dioxide thickness. These effects are explained by the silicon dioxide layer forming a series capacitance to the fringing field across the elements. Resonance coupling to the Si-O vibrational absorption has been observed. Native oxide layers which are normally ignored in numerical simulations of metamaterials must be accounted for to produce accurate predictions. (C) 2010 Optical Society of America

Journal Title

Optics Express

Volume

18

Issue/Number

2

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

1085

Last Page

1090

WOS Identifier

WOS:000273860400072

ISSN

1094-4087

Share

COinS