Abbreviated Journal Title
Opt. Express
Keywords
DESIGN; FILMS; Optics
Abstract
Infrared metamaterials fabricated on semiconductor substrates exhibit a high degree of sensitivity to very thin (as small as 2 nm) layers of low permittivity materials between the metallic elements and the underlying substrate. We have measured the resonant frequencies of split ring resonators and square loops fabricated on Si wafers with silicon dioxide thicknesses ranging from 0 to 10 nm. Resonance features blue shift with increasing silicon dioxide thickness. These effects are explained by the silicon dioxide layer forming a series capacitance to the fringing field across the elements. Resonance coupling to the Si-O vibrational absorption has been observed. Native oxide layers which are normally ignored in numerical simulations of metamaterials must be accounted for to produce accurate predictions.
Journal Title
Optics Express
Volume
18
Issue/Number
2
Publication Date
1-1-2010
Document Type
Article
Language
English
First Page
1085
Last Page
1090
WOS Identifier
ISSN
1094-4087
Recommended Citation
Shelton, D. J.; Peters, D. W.; Sinclair, M. B.; Brener, I.; Warne, L. K.; Basilio, L. I.; Coffey, K. R.; and Boreman, G. D., "Effect of thin silicon dioxide layers on resonant frequency in infrared metamaterials" (2010). Faculty Bibliography 2010s. 774.
https://stars.library.ucf.edu/facultybib2010/774
Comments
Authors: contact us about adding a copy of your work at STARS@ucf.edu