Abstract

Next generation technology is reliant on discovering new ways to produce large amounts of versatile materials. However, current industry is plagued with inefficient processing operations impeding device application. Recently, two-dimensional materials including transition metal dichalcogenides (TMDs) have attracted attention due to their unique electrical and optical properties. Molybdenum Disulfide (MoS2) has been recognized for its tunable band gap, high on/off ratio, high carrier mobility, and flexibility. In the past, MoS2 has been produced by mechanically exfoliating a bulk source. Unfortunately, exfoliation is an impractical process for a large area sample. Now, many methodologies incorporate the chemical vapor deposition process to produce large area samples. Yet, many deformities are still present inhibiting sample reproduction and device application. In our process, we synthesized high quality monolayer MoS2 on an insulating Si/SiO2 substrate using the Chemical Vapor Deposition method under atmospheric pressure. We placed Molybdenum Trioxide (MoO3) after the Si/SiO2 substrates since minute research has been done to explore the effects of the precursor’s placement. The result was a backflow of MoO3 vapor in the tube which reduced the concentration of Molybdenum vapor in the reaction zone. Utilizing optical microscopy, raman, and atomic force microscopy our process has been shown to grow a larger, cleaner area of monolayer MoS2 with fewer impurities to enable a more practical means of mass production compared to the traditional bottom up approach.

Date Created

February 2017

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Poster Presentation

https://works.bepress.com/Mike-Lopez/1/download/

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