EUVL, conversion efficiency, debris, laser plasma
Extreme Ultraviolet (EUV) sources rely on droplet laser plasmas for EUV generation. These sources consist of a small (30 µm diameter) droplet which is excited into plasma emitting EUV around 13.5 nm, the industry’s chosen wavelength for EUV lithography (EUVL). These sources are the best candidates for the commercialization of EUVL allowing mass production of computer chips with 32 nm or even smaller feature size. However, the biggest challenges which EUV source developers encounter today are the issues of conversion efficiency (CE) and debris. In order to satisfy the technology requirements, the source will need to meet high levels of stability, performance, and lifetime. Our tin-doped droplet plasma has demonstrated high CE and low debris resulting in long lifetime. Long term stability is obtained through the use of novel tracking techniques and active feedback. The laser plasma targeting system combines optical illumination and imaging, droplet technology innovation, advanced electronics, and custom software which act in harmony to provide complete stabilization of the droplets. Thus, a stable, debris-free light source combined with suitable collection optics can provide useful EUV radiation power. Detailed description of the targeting system and the evaluation of the system will be presented.
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Master of Science in Electrical Engineering (M.S.E.E.)
College of Engineering and Computer Science
Electrical Engineering and Computer Science
Length of Campus-only Access
Masters Thesis (Open Access)
Cunado, Jose, "Control And Stabilization Of Laser Plasmasources For Euv Lithography" (2007). Electronic Theses and Dissertations. 3127.
Restricted to the UCF community until July 2007; it will then be open access.