Keywords

EUVL, conversion efficiency, debris, laser plasma

Abstract

Extreme Ultraviolet (EUV) sources rely on droplet laser plasmas for EUV generation. These sources consist of a small (30 µm diameter) droplet which is excited into plasma emitting EUV around 13.5 nm, the industry’s chosen wavelength for EUV lithography (EUVL). These sources are the best candidates for the commercialization of EUVL allowing mass production of computer chips with 32 nm or even smaller feature size. However, the biggest challenges which EUV source developers encounter today are the issues of conversion efficiency (CE) and debris. In order to satisfy the technology requirements, the source will need to meet high levels of stability, performance, and lifetime. Our tin-doped droplet plasma has demonstrated high CE and low debris resulting in long lifetime. Long term stability is obtained through the use of novel tracking techniques and active feedback. The laser plasma targeting system combines optical illumination and imaging, droplet technology innovation, advanced electronics, and custom software which act in harmony to provide complete stabilization of the droplets. Thus, a stable, debris-free light source combined with suitable collection optics can provide useful EUV radiation power. Detailed description of the targeting system and the evaluation of the system will be presented.

Notes

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Graduation Date

2007

Semester

Summer

Advisor

Richardson, Martin

Degree

Master of Science in Electrical Engineering (M.S.E.E.)

College

College of Engineering and Computer Science

Department

Electrical Engineering and Computer Science

Degree Program

Electrical Engineering

Format

application/pdf

Identifier

CFE0001790

URL

http://purl.fcla.edu/fcla/etd/CFE0001790

Language

English

Release Date

July 2007

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

Restricted to the UCF community until July 2007; it will then be open access.

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