Abstract

The strong light trapping properties of Silicon Nanowires have attracted much interest in the past few years for the conversion of sun energy into conventional electricity. Studies have been completed for many researchers to reduce the cost of fabrication and reflectance of solar light in these nanostructures to make a cheaper and more efficient solar cell technology by using less equipment for fabrication and employing different materials and solution concentrations. Silver, a conducting and stable metal is used these days as a precursor to react with silicon and then form the nanowires. Its adequate selection of solution concentration for a size of silicon substrate and the treatment for post-cleaning of silver dendrites make it a viable method among the others. It is an aim of this research to obtain significant low reflectance across the visible solar light range. Detailed concentration, fabrication and reflectance studies is carried out on silicon wafer in order to expand knowledge and understanding. In this study, electroless etching technique has been used as the growth mechanism of SiNWs at room temperature. Optimum ratios of solution concentration and duration for different sizes of exposed area to grow tall silicon nanowires derived from experimentation are presented. Surface imaging of the structures and dimension of length and diameter have been determined by Scanner Electron Microscopy (SEM) and the reflectance in the optical range in silicon nanowires has been make using UV-Visible Spectrophotometer.

Notes

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Graduation Date

2017

Semester

Summer

Advisor

Sundaram, Kalpathy B.

Degree

Doctor of Philosophy (Ph.D.)

College

College of Engineering and Computer Science

Department

Electrical Engineering and Computer Engineering

Degree Program

Electrical Engineering

Format

application/pdf

Identifier

CFE0006815

URL

http://purl.fcla.edu/fcla/etd/CFE0006815

Language

English

Release Date

August 2017

Length of Campus-only Access

None

Access Status

Doctoral Dissertation (Open Access)

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