Impact of Electron Injection and Radiation Damage on Minority Carrier Transport Properties in Gallium Oxide and Gallium Nitride
This study investigates the minority carrier transport properties of wide bandgap semiconductors, primarily gallium oxide (Ga2O3) and gallium nitride (GaN). Ga2O3 is an emerging ultra-wide bandgap semiconductor with applications in high temperature electronics and sensors for use in extreme environments. Ga2O3 is a suitable material for devices deployed in the lower Earth satellite orbits due to its intrinsic radiation hardness, applications in solar-blind ultraviolet (UV) detection, and high power/high frequency electronics. The main factor limiting Ga2O3 technology so far is the reliable high mobility p-type Ga2O3; however, recent advances have shown a promising future for developments in this direction. Minority carrier transport properties such as minority carrier diffusion length (L) and lifetime (t) are of vital importance with the advent of p-type conductivity, as they are the limiting factor in the performance of bipolar devices. In this thesis, a comparison of the temperature dependence of L, t, and CL emission in n-type Si-doped Ga2O3 Schottky rectifiers, exposed to 18 MeV alpha particles and 10 MeV protons is presented. Additionally, the effect of electron injection, a countermeasure to in-situ mitigates the radiation damage, is studied in these structures. Electron injection has also been found to enhance L and t in unintentionally doped GaN. Lastly, the temperature dependence of minority carrier diffusion length and CL emission is presented in the novel p-type Ga2O3.
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Doctor of Philosophy (Ph.D.)
College of Sciences
Length of Campus-only Access
Doctoral Dissertation (Campus-only Access)
Modak, Sushrut, "Impact of Electron Injection and Radiation Damage on Minority Carrier Transport Properties in Gallium Oxide and Gallium Nitride" (2022). Electronic Theses and Dissertations, 2020-. 1479.
Restricted to the UCF community until November 2025; it will then be open access.