This study investigates the minority carrier transport properties of wide bandgap semiconductors, primarily gallium oxide (Ga2O3) and gallium nitride (GaN). Ga2O3 is an emerging ultra-wide bandgap semiconductor with applications in high temperature electronics and sensors for use in extreme environments. Ga2O3 is a suitable material for devices deployed in the lower Earth satellite orbits due to its intrinsic radiation hardness, applications in solar-blind ultraviolet (UV) detection, and high power/high frequency electronics. The main factor limiting Ga2O3 technology so far is the reliable high mobility p-type Ga2O3; however, recent advances have shown a promising future for developments in this direction. Minority carrier transport properties such as minority carrier diffusion length (L) and lifetime (t) are of vital importance with the advent of p-type conductivity, as they are the limiting factor in the performance of bipolar devices. In this thesis, a comparison of the temperature dependence of L, t, and CL emission in n-type Si-doped Ga2O3 Schottky rectifiers, exposed to 18 MeV alpha particles and 10 MeV protons is presented. Additionally, the effect of electron injection, a countermeasure to in-situ mitigates the radiation damage, is studied in these structures. Electron injection has also been found to enhance L and t in unintentionally doped GaN. Lastly, the temperature dependence of minority carrier diffusion length and CL emission is presented in the novel p-type Ga2O3.
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Doctor of Philosophy (Ph.D.)
College of Sciences
Length of Campus-only Access
Doctoral Dissertation (Campus-only Access)
Modak, Sushrut, "Impact of Electron Injection and Radiation Damage on Minority Carrier Transport Properties in Gallium Oxide and Gallium Nitride" (2022). Electronic Theses and Dissertations, 2020-. 1479.
Restricted to the UCF community until November 2025; it will then be open access.