Keywords

Thin Films, electronic transport, ruthenium, disorder

Abstract

The resistivity-size effect has emerged as an obstacle in our pursuit of ever shrinking electronic devices. Interconnects and vias are the nanoscale copper conductors connecting within and between layers of a CPU, respectively. New materials and methods are required to address this problem. In particular, there is a critical need for a theoretical framework which can evaluate the properties of new materials in a way that reflects real-world performance. To this end, a computational methodology is developed by introducing an ab initio parameterized tight-binding model to accurately calculate electronic structure and simulating electronic transport via the calculation of the Kubo-Greenwood conductivity tensor. Transport properties are computed using the kernel polynomial method, a highly scalable approach wherein physical quantities can be represented as a weighted sum of Chebyshev polynomials. Using this combined approach, it is possible to simulate mesoscale electronic transport for systems with over 10^6 sites containing various forms of realistic disorder. Through the use of ensemble calculations, an examination of resistivity due to surface disorder and disorder due to realistic phonon fields is presented.

Completion Date

2024

Semester

Spring

Committee Chair

Mucciolo, Eduardo

Degree

Doctor of Philosophy (Ph.D.)

College

College of Sciences

Department

Physics

Format

application/pdf

Identifier

DP0028402

URL

https://purls.library.ucf.edu/go/DP0028402

Language

English

Rights

In copyright

Release Date

May 2027

Length of Campus-only Access

3 years

Access Status

Doctoral Dissertation (Campus-only Access)

Campus Location

Orlando (Main) Campus

Accessibility Status

Meets minimum standards for ETDs/HUTs

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Restricted to the UCF community until May 2027; it will then be open access.

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