Keywords

ALD, Thin Film, Electronic Materials, Semiconductors, PEALD

Abstract

High precision electronics are particularly susceptible to swings in resistance that occur in most materials when temperatures change. To make electronics with consistent performance across a wide range of temperatures, near-zero temperature coefficient of resistivity (nz-TCR) materials are needed. Further, as technology shrinks and we approach the angstrom era, methods of depositing nz-TCR materials of sufficient thinness are also necessary. This study demonstrates the design and deposition of such thin films using atomic layer deposition (ALD). Precise composition control is possible due to the self-limiting and highly conformal nature of ALD. Films made include, firstly, a conducting form of titania (TiOx) – typically an insulator, known as black titania, with a conductivity 108 times higher than TiO2. Next, metallic, nanocrystalline ruthenium film was deposited via plasma-enhanced ALD. Then, composites of black titania - ruthenium were made to explore how composition and structure impact TCR. Lastly, films of silicon-doped titanium nitride were also deposited with varying at% silicon. This set of films produced an extreme near-zero temperature coefficient over a wide temperature range. The films were characterized with many methods, including scanning and tunneling electron microscopy, x-ray photoelectron spectroscopy, x-ray diffractometry, spectroscopic ellipsometry, van der Pauw resistivity measurements, and Hall measurements to obtain carrier concentration and carrier mobility. This comprehensive investigation thus reveals the relationship between structure, composition, and TCR, facilitating the future design of nz-TCR materials.

Completion Date

2024

Semester

Summer

Committee Chair

Banerjee, Parag

Degree

Doctor of Philosophy (Ph.D.)

College

College of Engineering and Computer Science

Department

Materials Science and Engineering

Format

application/pdf

Identifier

DP0028562

URL

https://purls.library.ucf.edu/go/DP0028562

Language

English

Release Date

8-15-2027

Length of Campus-only Access

3 years

Access Status

Doctoral Dissertation (Campus-only Access)

Campus Location

Orlando (Main) Campus

Accessibility Status

Meets minimum standards for ETDs/HUTs

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Restricted to the UCF community until 8-15-2027; it will then be open access.

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