Keywords

rare-earth materials, Oxide Dielectric Material, Ferromagnetic material, Semiconductors, insulator, Sputtering, annealing, resistive switching, capacitor, gate oxide

Abstract

Oxide semiconductors with high optical transparency hold significant promise for a broad range of optical applications. Among them, europium oxide (Eu₂O₃ ) has garnered considerable attention for its potential in transistor devices, resistive random-access memory (RRAM), white light-emitting devices, and erasable optical storage systems. Additionally, Eu₂O₃ is employed in nanoscale applications, such as photoactive coatings and high-k dielectrics. Its advantageous dielectric properties and high transmittance make it particularly well-suited for capacitor fabrication. The material also exhibits resistive switching behavior and notable optical absorption, further enhancing its relevance for optoelectronic devices.

In this study, Eu₂O₃ thin films were deposited using RF magnetron sputtering at a fixed power of 50 W under varying pressure conditions at room temperature. The films were subsequently annealed in oxygen and nitrogen at 100 – 200 °C. The films annealed in Nitrogen and Oxygen showed an increase in dielectric constant. For optical studies, films are deposited on a quartz substrate. The bandgap of the film is extracted using transmission studies in the UV-visible range. X-ray diffraction was used to investigate Europium Oxide crystallization behavior by annealing samples with oxygen and nitrogen at 600 and 750 °C temperatures.

Completion Date

2025

Semester

Summer

Committee Chair

Sundaram Kalpathy

Degree

Master of Science in Electrical Engineering (M.S.E.E.)

College

College of Engineering and Computer Science

Department

Department of Electrical and Computer Engineering

Format

PDF

Identifier

DP0029509

Language

English

Document Type

Thesis

Campus Location

Orlando (Main) Campus

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