Title

Capacitance Of Semiconductor P-N-Junction Space-Charge Layers - An Overview

Comments

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Abbreviated Journal Title

Am. Hist. Rev.

Keywords

Engineering; Electrical & Electronic

Abstract

The modeling of capacitance of p-n junction space-charge layers in semiconductor devices is discussed. First, previously developed models and methods are reviewed. Capacitance models developed recently by the authors that include mobile-carrier, nonquasi static, and multidimensional effects are then considered. These models yield more accurate device and circuit simulations for semiconductor integrated circuits. The emphasis is on diodes and bipolar transistors, but many concepts used apply as well to p-n junctions of metal-oxide-semiconductor field effect transistors. The review includes conventional homojunction devices (devices fabricated with a single semiconductor such as silicon) and the increasingly important heterojunction devices (devices fabricated with two or more semiconductors or a semiconductor having a spatially varying chemical composition such as gallium-aluminum-arsenide).

Journal Title

American Historical Review

Volume

76

Issue/Number

11

Publication Date

1-1-1988

Document Type

Article

Language

English

First Page

1406

Last Page

1422

WOS Identifier

WOS:A1988R672700002

ISSN

0018-9219

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