Title

Low-Temperature P-N-Junction Space-Charge-Region Thickness Including The Effects Of Doping-Dependent Dielectric Permittivity

Comments

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Keywords

Physics; Applied

Abstract

This paper studies the thickness of silicon p‐n junction space‐charge regions at low temperature including the effects of doping‐dependent dielectric permittivity ε(N), which is important for heavily doped semiconductor materials because of the presence of unionized impurity atoms that are subjected to polarization. The treatment is applicable for p‐n junctions under all voltages and is not based on the conventional depletion approximation which assumes free carriers are negligible in the space‐charge region. Comparison of the present thickness model including ε(N) and the conventional depletion model is included.

Journal Title

Journalism Quarterly

Volume

64

Issue/Number

11

Publication Date

1-1-1988

Document Type

Article

Language

English

First Page

6369

Last Page

6372

WOS Identifier

WOS:A1988R166700038

ISSN

0021-8979

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