Title

Base-Collector Junction Capacitance Of Bipolar transistors Operating At High-Current Densities

Authors

J. J. Liou

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

Engineering; Electrical & Electronic; Physics; Applied

Abstract

An analytical physics-based comprehensive base-collector junction capacitance model is presented. The model, which includes high-current effects, describes the base-collector space-charge-region capacitance for all operating regions, including the saturation region in which the space-charge region becomes forward biased. The present model is compared with the depletion capacitance model and significant discrepancies are predicted. An emitter-coupled logic gate circuit is used to demonstrate the practical usefulness of the model.

Journal Title

IEEE Transactions on Electron Devices

Volume

34

Issue/Number

11

Publication Date

1-1-1987

Document Type

Article

Language

English

First Page

2304

Last Page

2308

WOS Identifier

WOS:A1987K332800013

ISSN

0018-9383

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