Title
High-Forward-Voltage Junction Capacitance Including Effects Of Excess Carrier Storage In Electron-Hole Plasma
Abbreviated Journal Title
J. Appl. Phys.
Keywords
Physics; Applied
Abstract
A previous quasistatic junction space‐charge region capacitance model is improved by including the Fermi statistics and energy band‐gap narrowing that occurs in electron‐hole plasmas. The model is applicable for junctions under large forward voltages. A factor of 2–4 is predicted when the present capacitance model is compared with the previous capacitance model.
Journal Title
Journal of Applied Physics
Volume
62
Issue/Number
9
Publication Date
1-1-1987
Document Type
Article
DOI Link
Language
English
First Page
3853
Last Page
3856
WOS Identifier
ISSN
0021-8979
Recommended Citation
Liou, J. J. and Lindholm, F. A., "High-Forward-Voltage Junction Capacitance Including Effects Of Excess Carrier Storage In Electron-Hole Plasma" (1987). Faculty Bibliography 1980s. 889.
https://stars.library.ucf.edu/facultybib1980/889
Comments
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