High-Forward-Voltage Junction Capacitance Including Effects Of Excess Carrier Storage In Electron-Hole Plasma
Abbreviated Journal Title
J. Appl. Phys.
A previous quasistatic junction space‐charge region capacitance model is improved by including the Fermi statistics and energy band‐gap narrowing that occurs in electron‐hole plasmas. The model is applicable for junctions under large forward voltages. A factor of 2–4 is predicted when the present capacitance model is compared with the previous capacitance model.
Journal of Applied Physics
Liou, J. J. and Lindholm, F. A., "High-Forward-Voltage Junction Capacitance Including Effects Of Excess Carrier Storage In Electron-Hole Plasma" (1987). Faculty Bibliography 1980s. 889.