Studies On Deposition Parameters Of Silicon-Nitride Films Prepared By A Silane Nitrogen Plasma-Enhanced-Chemical-Vapor-Deposition Process Nitride Films Prepared By A Silane-Nitrogen

    Authors

    K. R. Lee; K. B. Sundaram;D. C. Malocha

    Comments

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    Abbreviated Journal Title

    J. Mater. Sci.-Mater. Electron.

    Keywords

    LOW HYDROGEN; CVD; DIOXIDE; AMMONIA; PECVD; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter

    Abstract

    Silicon-nitride films were deposited by a plasma-enhanced-chemical-vapour-deposition (PECVD) technique using silane-nitrogen as the reactant-gas sources. The influence of the process parameters (such as the flow ratio of the reactant gases, the pressure, the substrate temperature, the radio frequency (r.f.) power, the time of deposition and the electrode spacing) on the deposition and etch rates were investigated and the experimental results are presented in detail.

    Journal Title

    Journal of Materials Science-Materials in Electronics

    Volume

    5

    Issue/Number

    5

    Publication Date

    1-1-1994

    Document Type

    Article

    Language

    English

    First Page

    255

    Last Page

    259

    WOS Identifier

    WOS:A1994PL06900001

    ISSN

    0957-4522

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