http://dx.doi.org/10.1007/bf00921247

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Title

Studies On Deposition Parameters Of Silicon-Nitride Films Prepared By A Silane Nitrogen Plasma-Enhanced-Chemical-Vapor-Deposition Process Nitride Films Prepared By A Silane-Nitrogen

Authors

Authors

K. R. Lee; K. B. Sundaram;D. C. Malocha

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Mater. Sci.-Mater. Electron.

Keywords

LOW HYDROGEN; CVD; DIOXIDE; AMMONIA; PECVD; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter

Abstract

Silicon-nitride films were deposited by a plasma-enhanced-chemical-vapour-deposition (PECVD) technique using silane-nitrogen as the reactant-gas sources. The influence of the process parameters (such as the flow ratio of the reactant gases, the pressure, the substrate temperature, the radio frequency (r.f.) power, the time of deposition and the electrode spacing) on the deposition and etch rates were investigated and the experimental results are presented in detail.

Journal Title

Journal of Materials Science-Materials in Electronics

Volume

5

Issue/Number

5

Publication Date

1-1-1994

Document Type

Article

Language

English

First Page

255

Last Page

259

WOS Identifier

WOS:A1994PL06900001

ISSN

0957-4522

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