Title

A Model-Based Comparison Of The Performance Of Algaas/Gaas And Si/Sige Heterojunction Bipolar-Transistors (Hbts) Including Thermal Effects

Authors

Authors

J. J. Liou

Comments

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Abbreviated Journal Title

Jpn. J. Appl. Phys. Part 2 - Lett.

Keywords

DEVICE MODELING; HETEROJUNCTION BIPOLAR TRANSISTOR; SIMULATION; Physics, Applied

Abstract

The performances of AlGaAs/GaAs and Si/SiGe heterojunction bipolar transistors (HBTs) at room temperature are compared based on an analytical model which includes relevant physics such as the high-current and thermal (or self-heating) effects. Three figures of merit of the HBTs are calculated and compared: the dc current gain, cutoff frequency, and maximum oscillation frequency. Our results indicate that the AlGaAs/GaAs HBT possesses less uniform but higher peak current gain, cutoff frequency, and maximum oscillation frequency than its Si/SiGe counterpart. Furthermore, at high current densities, it has been shown that the thermal effect becomes important and degrades the performance of AlGaAs/GaAs HBT more significantly than that of Si/SiGe HBT due primarily to the poorer GaAs thermal conductivity than Si.

Journal Title

Japanese Journal of Applied Physics Part 2-Letters

Volume

33

Issue/Number

7B

Publication Date

1-1-1994

Document Type

Article

Language

English

First Page

L990

Last Page

L992

WOS Identifier

WOS:A1994PA98300005

ISSN

0021-4922

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