A Model-Based Comparison Of The Performance Of Algaas/Gaas And Si/Sige Heterojunction Bipolar-Transistors (Hbts) Including Thermal Effects

    Authors

    J. J. Liou

    Comments

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    Abbreviated Journal Title

    Jpn. J. Appl. Phys. Part 2 - Lett.

    Keywords

    DEVICE MODELING; HETEROJUNCTION BIPOLAR TRANSISTOR; SIMULATION; Physics, Applied

    Abstract

    The performances of AlGaAs/GaAs and Si/SiGe heterojunction bipolar transistors (HBTs) at room temperature are compared based on an analytical model which includes relevant physics such as the high-current and thermal (or self-heating) effects. Three figures of merit of the HBTs are calculated and compared: the dc current gain, cutoff frequency, and maximum oscillation frequency. Our results indicate that the AlGaAs/GaAs HBT possesses less uniform but higher peak current gain, cutoff frequency, and maximum oscillation frequency than its Si/SiGe counterpart. Furthermore, at high current densities, it has been shown that the thermal effect becomes important and degrades the performance of AlGaAs/GaAs HBT more significantly than that of Si/SiGe HBT due primarily to the poorer GaAs thermal conductivity than Si.

    Journal Title

    Japanese Journal of Applied Physics Part 2-Letters

    Volume

    33

    Issue/Number

    7B

    Publication Date

    1-1-1994

    Document Type

    Article

    Language

    English

    First Page

    L990

    Last Page

    L992

    WOS Identifier

    WOS:A1994PA98300005

    ISSN

    0021-4922

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