Fabrication And Characterization Of Metal-Insulator-Semiconductor Field-Effect Transistors Using Sputtered Silicon-Nitride Film As A Gate Dielectric

    Authors

    K. B. Sundaram;S. S. Seshan

    Comments

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    Abbreviated Journal Title

    Int. J. Electron.

    Keywords

    TA2O5 FILMS; MEMORY; DEPOSITION; DIOXIDE; STRESS; Engineering, Electrical & Electronic

    Abstract

    RF magnetron sputter deposited silicon nitride film was used as the gate dielectric material for the fabrication of metal-insulator-semiconductor field effect transistors, The fabrication process of an enhancement type n-channel device is discussed in detail. The electrical measurements for the fabricated devices indicated low threshold voltages.

    Journal Title

    International Journal of Electronics

    Volume

    77

    Issue/Number

    1

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    61

    Last Page

    69

    WOS Identifier

    WOS:A1994PD65300006

    ISSN

    0020-7217

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