Title
Fabrication And Characterization Of Metal-Insulator-Semiconductor Field-Effect Transistors Using Sputtered Silicon-Nitride Film As A Gate Dielectric
Abbreviated Journal Title
Int. J. Electron.
Keywords
TA2O5 FILMS; MEMORY; DEPOSITION; DIOXIDE; STRESS; Engineering, Electrical & Electronic
Abstract
RF magnetron sputter deposited silicon nitride film was used as the gate dielectric material for the fabrication of metal-insulator-semiconductor field effect transistors, The fabrication process of an enhancement type n-channel device is discussed in detail. The electrical measurements for the fabricated devices indicated low threshold voltages.
Journal Title
International Journal of Electronics
Volume
77
Issue/Number
1
Publication Date
1-1-1995
Document Type
Article
Language
English
First Page
61
Last Page
69
WOS Identifier
ISSN
0020-7217
Recommended Citation
"Fabrication And Characterization Of Metal-Insulator-Semiconductor Field-Effect Transistors Using Sputtered Silicon-Nitride Film As A Gate Dielectric" (1995). Faculty Bibliography 1990s. 1190.
https://stars.library.ucf.edu/facultybib1990/1190
Comments
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