Title

Thermal-Avalanche Interacting Behavior Of Algaas/Gaas Multi-Emitter Finger Heterojunction Bipolar-Transistors

Authors

Authors

J. J. Liou; A. Ortizconde; L. L. Liou;C. I. Huang

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

ALGAAS/GAAS HBT; THERMAL; AVALANCHE; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

A theoretical study on the heterojunction bipolar transistor (HBT) avalanche characteristics is presented, and an empirical model to describe the observed HBT behavior developed. It is found that using the impact ionization mechanism alone cannot fully explain the small-geometry HBT avalanche behaviour, and the thermal effect needs to be included due to the elevated temperature in such operation. The model compares favorably with experimental data measured from a 6-emitter finger HBT.

Journal Title

Solid-State Electronics

Volume

38

Issue/Number

9

Publication Date

1-1-1995

Document Type

Article; Proceedings Paper

DOI Link

http://dx.doi.org/10.1016/0038-1101(95)00051-t

Language

English

First Page

1645

Last Page

1645

WOS Identifier

WOS:A1995RU23000019

ISSN

0038-1101

Recommended Citation

"Thermal-Avalanche Interacting Behavior Of Algaas/Gaas Multi-Emitter Finger Heterojunction Bipolar-Transistors" (1995). Faculty Bibliography 1990s. 1397.
https://stars.library.ucf.edu/facultybib1990/1397