Thermal-Avalanche Interacting Behavior Of Algaas/Gaas Multi-Emitter Finger Heterojunction Bipolar-Transistors

    Authors

    J. J. Liou; A. Ortizconde; L. L. Liou;C. I. Huang

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    ALGAAS/GAAS HBT; THERMAL; AVALANCHE; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    A theoretical study on the heterojunction bipolar transistor (HBT) avalanche characteristics is presented, and an empirical model to describe the observed HBT behavior developed. It is found that using the impact ionization mechanism alone cannot fully explain the small-geometry HBT avalanche behaviour, and the thermal effect needs to be included due to the elevated temperature in such operation. The model compares favorably with experimental data measured from a 6-emitter finger HBT.

    Journal Title

    Solid-State Electronics

    Volume

    38

    Issue/Number

    9

    Publication Date

    1-1-1995

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    1645

    Last Page

    1645

    WOS Identifier

    WOS:A1995RU23000019

    ISSN

    0038-1101

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