Title
Thermal-Avalanche Interacting Behavior Of Algaas/Gaas Multi-Emitter Finger Heterojunction Bipolar-Transistors
Abbreviated Journal Title
Solid-State Electron.
Keywords
ALGAAS/GAAS HBT; THERMAL; AVALANCHE; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Abstract
A theoretical study on the heterojunction bipolar transistor (HBT) avalanche characteristics is presented, and an empirical model to describe the observed HBT behavior developed. It is found that using the impact ionization mechanism alone cannot fully explain the small-geometry HBT avalanche behaviour, and the thermal effect needs to be included due to the elevated temperature in such operation. The model compares favorably with experimental data measured from a 6-emitter finger HBT.
Journal Title
Solid-State Electronics
Volume
38
Issue/Number
9
Publication Date
1-1-1995
Document Type
Article; Proceedings Paper
Language
English
First Page
1645
Last Page
1645
WOS Identifier
ISSN
0038-1101
Recommended Citation
"Thermal-Avalanche Interacting Behavior Of Algaas/Gaas Multi-Emitter Finger Heterojunction Bipolar-Transistors" (1995). Faculty Bibliography 1990s. 1397.
https://stars.library.ucf.edu/facultybib1990/1397
Comments
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