Thermal And Reverse Base Current Effects On Heterojunction Bipolar-Transistors And Circuits

    Authors

    J. S. Yuan

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    HBT; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    An empirical model of a heterojunction bipolar transistor is presented. The model expands the Gummel-Poon equations to account for device self-heating, base current reversal, and the collector-emitter offset voltage. It is shown that self-heating has implications for the cutoff frequency of the HBT, for the frequency response of a small-signal amplifier, and also for the thermal stability of a current mirror circuit.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    42

    Issue/Number

    5

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    789

    Last Page

    794

    WOS Identifier

    WOS:A1995QU42700001

    ISSN

    0018-9383

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