Current Voltage Characteristics Of Submicrom Gaas-Mesfets With Nonuniform Channel Doping Profiles

    Authors

    K. M. Shih; D. P. Klemer;J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Field; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    We present a physics-based model for GaAs metal semiconductor field-effect transistors (MESFETs). The present model improves an existing model by allowing the possibility that the electric field near the source region can exceed a critical field, which is likely in an advanced submicrom MESFET operated in the quasi-saturation or saturation region. Furthermore, a realistic and nonuniform channel doping profile was considered in our calculations. Experimental data measured from a low-noise, ion-implanted MESFET are included in support of the model. The effects of different doping profiles and velocity profiles in the channel on the MESFET current-voltage characteristics were also investigated.

    Journal Title

    Solid-State Electronics

    Volume

    35

    Issue/Number

    11

    Publication Date

    1-1-1992

    Document Type

    Article

    Language

    English

    First Page

    1639

    Last Page

    1644

    WOS Identifier

    WOS:A1992JT08100011

    ISSN

    0038-1101

    Share

    COinS