Current Voltage Characteristics Of Bipolar-Transistors Including Quasi-Saturation, Finite Collector Lifetime, And High-Low Junction Effects

    Authors

    J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Int. J. Electron.

    Keywords

    Model; Engineering, Electrical & Electronic

    Abstract

    A physics-based and compact model is developed to predict the bipolar transistor DC characteristics covering all saturation, quasi-saturation, and active operations. The present model differs from the existing models in that the present model employs a regional approach rather than the charge-control approach used previously and that the present model requires only the physical parameters, such as device make-up, whereas the previous models often require parameters extracted from measurements. Device physics relevant to the base-collector junction, like current-induced base widening and conductivity modulation and electron-hole recombination in the quasi-neutral collector layer, are accounted for in the analysis. We show that the current voltage characteristics predicted by the present model compare favourably with that obtained from measurements and simulations reported in the literature.

    Journal Title

    International Journal of Electronics

    Volume

    72

    Issue/Number

    1

    Publication Date

    1-1-1992

    Document Type

    Article

    Language

    English

    First Page

    89

    Last Page

    98

    WOS Identifier

    WOS:A1992GY33100009

    ISSN

    0020-7217

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