Effect Of Impact Ionization On C-Jc, Of Heterojunction Bipolar-Transistors

    Authors

    J. S. Yuan;J. H. Ning

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    FORWARD-VOLTAGE CAPACITANCE; SPACE-CHARGE REGIONS; DC CHARACTERISTICS; TRANSPORT; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Journal Title

    Solid-State Electronics

    Volume

    38

    Issue/Number

    3

    Publication Date

    1-1-1995

    Document Type

    Note

    Language

    English

    First Page

    742

    Last Page

    744

    WOS Identifier

    WOS:A1995QK01500031

    ISSN

    0038-1101

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