Title

Analysis Of Abrupt And Linearly Graded Heterojunction Bipolar-Transistors With Or Without A Setback Layer

Authors

Authors

J. S. Yuan;J. H. Ning

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEE Proc.-Circuit Device Syst.

Keywords

BIPOLAR TRANSISTORS; HETEROJUNCTIONS; SELF-HEATING JUNCTION CAPACITANCE; CURRENT GAIN; MODEL; RECOMBINATION; TRANSPORT; Engineering, Electrical & Electronic

Abstract

Analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer have been derived. The equations are general and applicable to both abrupt and linearly graded heterojunction bipolar transistors. Collector and base currents and small-signal parameters such as transconductance and cutoff frequency of the abrupt and linearly graded heterojunction bipolar transistors with or without a setback layer are evaluated. Comparisons between the isothermal model, the numerical model, and the present model including the self-heating effect are demonstrated.

Journal Title

Iee Proceedings-Circuits Devices and Systems

Volume

142

Issue/Number

4

Publication Date

1-1-1995

Document Type

Article

DOI Link

http://dx.doi.org/10.1049/ip-cds:19952030

Language

English

First Page

254

Last Page

262

WOS Identifier

WOS:A1995TJ56500007

ISSN

1350-2409

Recommended Citation

"Analysis Of Abrupt And Linearly Graded Heterojunction Bipolar-Transistors With Or Without A Setback Layer" (1995). Faculty Bibliography 1990s. 1518.
https://stars.library.ucf.edu/facultybib1990/1518