Analysis Of Abrupt And Linearly Graded Heterojunction Bipolar-Transistors With Or Without A Setback Layer

    Authors

    J. S. Yuan;J. H. Ning

    Comments

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    Abbreviated Journal Title

    IEE Proc.-Circuit Device Syst.

    Keywords

    BIPOLAR TRANSISTORS; HETEROJUNCTIONS; SELF-HEATING JUNCTION CAPACITANCE; CURRENT GAIN; MODEL; RECOMBINATION; TRANSPORT; Engineering, Electrical & Electronic

    Abstract

    Analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer have been derived. The equations are general and applicable to both abrupt and linearly graded heterojunction bipolar transistors. Collector and base currents and small-signal parameters such as transconductance and cutoff frequency of the abrupt and linearly graded heterojunction bipolar transistors with or without a setback layer are evaluated. Comparisons between the isothermal model, the numerical model, and the present model including the self-heating effect are demonstrated.

    Journal Title

    Iee Proceedings-Circuits Devices and Systems

    Volume

    142

    Issue/Number

    4

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    254

    Last Page

    262

    WOS Identifier

    WOS:A1995TJ56500007

    ISSN

    1350-2409

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