Title
Effects of incomplete ionization of impurity dopants on the performance of bipolar junction transistors
Keywords
Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Journal Title
Solid-State Electronics
Volume
39
Issue/Number
2
Publication Date
1-1-1996
Document Type
Article
Language
English
First Page
318
Last Page
320
WOS Identifier
ISSN
0038-1101
Recommended Citation
"Effects of incomplete ionization of impurity dopants on the performance of bipolar junction transistors" (1996). Faculty Bibliography 1990s. 1808.
https://stars.library.ucf.edu/facultybib1990/1808
COinS
Comments
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