Effects of incomplete ionization of impurity dopants on the performance of bipolar junction transistors

    Authors

    Y. Yue;J. J. Liou

    Comments

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    Keywords

    Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Journal Title

    Solid-State Electronics

    Volume

    39

    Issue/Number

    2

    Publication Date

    1-1-1996

    Document Type

    Article

    Language

    English

    First Page

    318

    Last Page

    320

    WOS Identifier

    WOS:A1996TR43000023

    ISSN

    0038-1101

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