Effects of high-level free-carrier injection on the base transit time of bipolar junction transistors

    Authors

    Y. Yue; J. J. Liou; A. OrtizConde;F. G. Sanchez

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    This paper presents a detailed study on the effects of high-level free-carrier injection on the base transit time of bipolar junction transistors (BJTs). The results are calculated using the modified ambipolar transport equation and using several different approximations for the majority-carrier current in the quasi-neutral base (QNB). It is shown that high-level injection can create a large retarding field in the QNB which is in the opposite direction of the built-in field associated with the nonuniform doping concentration, thus increasing the base transit time. Our results further suggest that the widely used zero majority-carrier current approximation gives rise to a larger error compared to other lesser known approximations.

    Journal Title

    Solid-State Electronics

    Volume

    39

    Issue/Number

    1

    Publication Date

    1-1-1996

    Document Type

    Article

    Language

    English

    First Page

    27

    Last Page

    31

    WOS Identifier

    WOS:000073841100011

    ISSN

    0038-1101

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