Failure mechanism and spice modeling of AlGaAs/GaAs HBT long-term current instability

    Authors

    J. J. Liou;S. H. Sheu

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    HETEROJUNCTION BIPOLAR-TRANSISTORS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    The long-term current instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is studied, and the physical mechanism contributing to such a behavior is investigated. Based on this, a model capable of predicting the HBT long-term current drift and mean time to failure (MTTF) is developed. In addition, such a model is implemented into SPICE circuit simulator, thus allowing the simulation of HBT circuits subjected to an electrical and thermal stress condition. (C) 1997 Elsevier Science Ltd.

    Journal Title

    Microelectronics and Reliability

    Volume

    37

    Issue/Number

    10-11

    Publication Date

    1-1-1997

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    1643

    Last Page

    1650

    WOS Identifier

    WOS:A1997YB68300054

    ISSN

    0026-2714

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