Title
Failure mechanism and spice modeling of AlGaAs/GaAs HBT long-term current instability
Abbreviated Journal Title
Microelectron. Reliab.
Keywords
HETEROJUNCTION BIPOLAR-TRANSISTORS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Abstract
The long-term current instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is studied, and the physical mechanism contributing to such a behavior is investigated. Based on this, a model capable of predicting the HBT long-term current drift and mean time to failure (MTTF) is developed. In addition, such a model is implemented into SPICE circuit simulator, thus allowing the simulation of HBT circuits subjected to an electrical and thermal stress condition. (C) 1997 Elsevier Science Ltd.
Journal Title
Microelectronics and Reliability
Volume
37
Issue/Number
10-11
Publication Date
1-1-1997
Document Type
Article; Proceedings Paper
Language
English
First Page
1643
Last Page
1650
WOS Identifier
ISSN
0026-2714
Recommended Citation
"Failure mechanism and spice modeling of AlGaAs/GaAs HBT long-term current instability" (1997). Faculty Bibliography 1990s. 1989.
https://stars.library.ucf.edu/facultybib1990/1989
Comments
Authors: contact us about adding a copy of your work at STARS@ucf.edu