Failure mechanism and spice modeling of AlGaAs/GaAs HBT long-term current instability
Abbreviated Journal Title
HETEROJUNCTION BIPOLAR-TRANSISTORS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
The long-term current instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is studied, and the physical mechanism contributing to such a behavior is investigated. Based on this, a model capable of predicting the HBT long-term current drift and mean time to failure (MTTF) is developed. In addition, such a model is implemented into SPICE circuit simulator, thus allowing the simulation of HBT circuits subjected to an electrical and thermal stress condition. (C) 1997 Elsevier Science Ltd.
Microelectronics and Reliability
Article; Proceedings Paper
"Failure mechanism and spice modeling of AlGaAs/GaAs HBT long-term current instability" (1997). Faculty Bibliography 1990s. 1989.