Title

A new method for extracting the effective channel length of MOSFETs

Authors

Authors

A. Ortiz-Conde; J. J. Liou; F. J. G. Sanchez; E. G. Fernandes; O. M. Castillo; M. D. R. Hassan;G. De Mercato

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

A new and simple method to extract the effective channel length L-eff of metal-oxide superconductor field effect transistor (MOSFET)s is presented. The method, which is developed based on an auxiliary integral function, has the advantage of determining the value of L-eff not influenced by the series resistances of the MOSFET. The method is tested in the environments of device simulation and measurements. In addition, comparison is made between the results obtained from the present method and a widely used L-eff extraction method. (C) 1998 Elsevier Science Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

38

Issue/Number

12

Publication Date

1-1-1998

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/s0026-2714(98)00070-5

Language

English

First Page

1867

Last Page

1870

WOS Identifier

WOS:000077873600008

ISSN

0026-2714

Recommended Citation

"A new method for extracting the effective channel length of MOSFETs" (1998). Faculty Bibliography 1990s. 2392.
https://stars.library.ucf.edu/facultybib1990/2392