A new method for extracting the effective channel length of MOSFETs

    Authors

    A. Ortiz-Conde; J. J. Liou; F. J. G. Sanchez; E. G. Fernandes; O. M. Castillo; M. D. R. Hassan;G. De Mercato

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    A new and simple method to extract the effective channel length L-eff of metal-oxide superconductor field effect transistor (MOSFET)s is presented. The method, which is developed based on an auxiliary integral function, has the advantage of determining the value of L-eff not influenced by the series resistances of the MOSFET. The method is tested in the environments of device simulation and measurements. In addition, comparison is made between the results obtained from the present method and a widely used L-eff extraction method. (C) 1998 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    38

    Issue/Number

    12

    Publication Date

    1-1-1998

    Document Type

    Article

    Language

    English

    First Page

    1867

    Last Page

    1870

    WOS Identifier

    WOS:000077873600008

    ISSN

    0026-2714

    Share

    COinS