A new approach for SPICE simulation of AlGaAs/GaAs HBT subjected to burn-in test

    Authors

    S. Sheu; J. J. Liou;C. I. Huang

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    HETEROJUNCTION BIPOLAR-TRANSISTORS; MODEL; BASE; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    A new approach for extracting the parameters of the AlGaAs/GaAs heterojunction bipolar transistor (HBT) subjected to the electrical/thermal stress test (i.e., burn-in test) is presented. Such an approach is implemented into SPICE, thus allowing the simulations of the performance of post-burn-in HBT circuits. Steady-state, frequency, and transient responses of an HBT differential amplifier are simulated using the present HBT SPICE model. Results simulated from a two-dimensional (2-D) device simulator are also included in support of the model.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    45

    Issue/Number

    1

    Publication Date

    1-1-1998

    Document Type

    Article

    Language

    English

    First Page

    326

    Last Page

    329

    WOS Identifier

    WOS:000071225200045

    ISSN

    0018-9383

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