Electrostatic discharge in semiconductor devices: An overview

    Authors

    J. E. Vinson;J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Proc. IEEE

    Keywords

    electrical overstress; electrostatic discharge; empirical models; failure mechanisms; semiconductor devices; CMOS INTEGRATED-CIRCUITS; BASE BIAS STRESS; PROTECTION TECHNIQUES; FAILURE; ESD; RELIABILITY; DEGRADATION; MECHANISMS; BREAKDOWN; PULSES; Engineering, Electrical & Electronic

    Abstract

    Electrostatic discharge (ESD) is an event that sends current through an integrated circuit (IC). This paper reviews the impact of ESD on the IC industry and details the four stages of an ESD event: 1) charge generation, 2) charge transfer, 3) device response, and 4) device failure. Topics reviewed are charge generation mechanisms, models for ESD charge transfer electrical conduction mechanisms, and device damage mechanisms leading to circuit failure.

    Journal Title

    Proceedings of the Ieee

    Volume

    86

    Issue/Number

    2

    Publication Date

    1-1-1998

    Document Type

    Article

    Language

    English

    First Page

    399

    Last Page

    418

    WOS Identifier

    WOS:000071949000006

    ISSN

    0018-9219

    Share

    COinS