An empirical model for the characterization of hot-carrier induced MOS device degradation

    Authors

    W. S. Wong; A. Ice;J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Journal Title

    Solid-State Electronics

    Volume

    42

    Issue/Number

    1

    Publication Date

    1-1-1998

    Document Type

    Article

    Language

    English

    First Page

    173

    Last Page

    175

    WOS Identifier

    WOS:000072437900023

    ISSN

    0038-1101

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