A multi-emitter finger AlGaAs/GaAs HBT model including the effects of two-dimensional temperature distribution on emitter fingers

    Authors

    W. Zhou; S. Sheu; J. J. Liou;C. I. Huang

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    HETEROJUNCTION BIPOLAR-TRANSISTORS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Two-dimensional temperature distribution on the emitter fingers of multi-finger AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is studied, and a model including such effects was developed to describe the HBT behavior and performance, such as the d.c. current gain and cutoff frequency. Device design issues such as the number of fingers, finger spacing, and finger dimension were considered. Results obtained from measurements and simulated from a three-dimensional device simulator are included in support of the model. Further, the present model is compared against the conventional model to assess the degree of inaccuracy caused by the use of one-dimensional temperature profile in HBT modeling. (C) 1998 Elsevier Science Ltd.

    Journal Title

    Solid-State Electronics

    Volume

    42

    Issue/Number

    5

    Publication Date

    1-1-1998

    Document Type

    Article

    Language

    English

    First Page

    693

    Last Page

    698

    WOS Identifier

    WOS:000074142500002

    ISSN

    0038-1101

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