Title

Modeling and measurement approaches for electrostatic discharge in semiconductor devices and ICs: an overview

Authors

Authors

J. C. Lee; G. D. Croft; J. J. Liou; W. R. Young;J. Bernier

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

Electrostatic charges can be generated everywhere. When they are discharged through semiconductor devices and integrated circuits, an event called an electrostatic discharge (ESD), failure of electronics systems using these devices and ICs can occur. This paper first gives an overview of the ESD sources and models. Then the emphasis is placed on the modeling and measurements of the most commonly used of these models caned the human body model (HBM). Various HBM protection circuits are examined to look at ways of preventing ICs from being damaged should ESD events occur. The issue of HBM measurements is also addressed so that the rapid transient associated with this ESD model can be accurately measured and characterized. (C) 1999 Elsevier Science Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

39

Issue/Number

5

Publication Date

1-1-1999

Document Type

Article

Language

English

First Page

579

Last Page

593

WOS Identifier

WOS:000082296800004

ISSN

0026-2714

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