Modeling and measurement approaches for electrostatic discharge in semiconductor devices and ICs: an overview

    Authors

    J. C. Lee; G. D. Croft; J. J. Liou; W. R. Young;J. Bernier

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    Electrostatic charges can be generated everywhere. When they are discharged through semiconductor devices and integrated circuits, an event called an electrostatic discharge (ESD), failure of electronics systems using these devices and ICs can occur. This paper first gives an overview of the ESD sources and models. Then the emphasis is placed on the modeling and measurements of the most commonly used of these models caned the human body model (HBM). Various HBM protection circuits are examined to look at ways of preventing ICs from being damaged should ESD events occur. The issue of HBM measurements is also addressed so that the rapid transient associated with this ESD model can be accurately measured and characterized. (C) 1999 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    39

    Issue/Number

    5

    Publication Date

    1-1-1999

    Document Type

    Article

    Language

    English

    First Page

    579

    Last Page

    593

    WOS Identifier

    WOS:000082296800004

    ISSN

    0026-2714

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