Modeling the base-collector heterojunction barrier effect at high current densities of SiGe HBTs

    Authors

    J. Song;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    BIPOLAR-TRANSISTORS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    The conduction band barrier effect at high collector current densities of the SiGe heterojunction bipolar transistor has been modeled. The effects of conduction band discontinuity on the collector current and collector-base heterojunction capacitance are examined. The analytical results are compared with experimental data. Good agreement between the model predictions and experiment is obtained. (C) 1998 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    43

    Issue/Number

    2

    Publication Date

    1-1-1999

    Document Type

    Letter

    Language

    English

    First Page

    457

    Last Page

    461

    WOS Identifier

    WOS:000077736000032

    ISSN

    0038-1101

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