Title
Modeling the base-collector heterojunction barrier effect at high current densities of SiGe HBTs
Abbreviated Journal Title
Solid-State Electron.
Keywords
BIPOLAR-TRANSISTORS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Abstract
The conduction band barrier effect at high collector current densities of the SiGe heterojunction bipolar transistor has been modeled. The effects of conduction band discontinuity on the collector current and collector-base heterojunction capacitance are examined. The analytical results are compared with experimental data. Good agreement between the model predictions and experiment is obtained. (C) 1998 Elsevier Science Ltd. All rights reserved.
Journal Title
Solid-State Electronics
Volume
43
Issue/Number
2
Publication Date
1-1-1999
Document Type
Letter
Language
English
First Page
457
Last Page
461
WOS Identifier
ISSN
0038-1101
Recommended Citation
"Modeling the base-collector heterojunction barrier effect at high current densities of SiGe HBTs" (1999). Faculty Bibliography 1990s. 2859.
https://stars.library.ucf.edu/facultybib1990/2859
Comments
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