Title

Simulation of Si power MOSFET under cryogenic conditions

Authors

Authors

R. J. Mauriello; K. B. Sundaram;L. C. Chow

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

OPERATION; TRANSISTORS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

In this work, integrated systems engineering technical computer aided design software (ISE-TCAD) has been used for Si power MOSFETs to model and simulate under room temperature (300 K) and liquid nitrogen temperature (77 K). A computer-generated model is developed and a variety of parameter extractions are performed. Then, particular regions of the power MOSFET are modified and reevaluated for a comparison of parameter analysis. It is shown that, for this device, as the temperature decreases, the on resistance decreases and transconductance increase by three times as does epitaxial layer mobility. However breakdown voltage and threshold voltage deteriorate slightly. (C) 1999 Elsevier Science Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

43

Issue/Number

4

Publication Date

1-1-1999

Document Type

Article

Language

English

First Page

771

Last Page

777

WOS Identifier

WOS:000080893000011

ISSN

0038-1101

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