Simulation of Si power MOSFET under cryogenic conditions

    Authors

    R. J. Mauriello; K. B. Sundaram;L. C. Chow

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    OPERATION; TRANSISTORS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    In this work, integrated systems engineering technical computer aided design software (ISE-TCAD) has been used for Si power MOSFETs to model and simulate under room temperature (300 K) and liquid nitrogen temperature (77 K). A computer-generated model is developed and a variety of parameter extractions are performed. Then, particular regions of the power MOSFET are modified and reevaluated for a comparison of parameter analysis. It is shown that, for this device, as the temperature decreases, the on resistance decreases and transconductance increase by three times as does epitaxial layer mobility. However breakdown voltage and threshold voltage deteriorate slightly. (C) 1999 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    43

    Issue/Number

    4

    Publication Date

    1-1-1999

    Document Type

    Article

    Language

    English

    First Page

    771

    Last Page

    777

    WOS Identifier

    WOS:000080893000011

    ISSN

    0038-1101

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