Simulation of silicon carbide power MOSFETs at high temperature

    Authors

    S. F. Shams; K. B. Sundaram;L. C. Chow

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    DEPOSITION; DEVICES; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Numerical device simulations have been performed on SiC vertical power MOSFETs at high temperatures using ISE-TCAD device simulator. The same device structure and temperatures were used for 6H- and 4H-SiC SiC materials for the device simulation. All the parameters used in the simulation for SiC were obtained from the recently reported values. (C) 1998 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    43

    Issue/Number

    2

    Publication Date

    1-1-1999

    Document Type

    Article

    Language

    English

    First Page

    367

    Last Page

    374

    WOS Identifier

    WOS:000077736000021

    ISSN

    0038-1101

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