Title

Simulation of silicon carbide power MOSFETs at high temperature

Authors

Authors

S. F. Shams; K. B. Sundaram;L. C. Chow

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

DEPOSITION; DEVICES; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

Numerical device simulations have been performed on SiC vertical power MOSFETs at high temperatures using ISE-TCAD device simulator. The same device structure and temperatures were used for 6H- and 4H-SiC SiC materials for the device simulation. All the parameters used in the simulation for SiC were obtained from the recently reported values. (C) 1998 Elsevier Science Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

43

Issue/Number

2

Publication Date

1-1-1999

Document Type

Article

Language

English

First Page

367

Last Page

374

WOS Identifier

WOS:000077736000021

ISSN

0038-1101

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