Abbreviated Journal Title
J. Appl. Phys.
Abstract
This reply addresses the issues raised by Rode and Rosenbaum regarding the bipolar junction transistor model developed in the subject paper [J. Appl. Phys. 68, 5911 (1990)]. The error associated with Eq. (4) in the subject paper is discussed and corrected, the value of the space-charge-region recombination time used is specified, and the results are recalculated. It is shown that the error in Eq. (4) does not alter notably the trends of the current gain calculated using the two different intrinsic concentrations.
Journal Title
Journal of Applied Physics
Volume
70
Issue/Number
7
Publication Date
1-1-1991
Document Type
Note
DOI Link
Language
English
First Page
3975
Last Page
3976
WOS Identifier
ISSN
0021-8979
Recommended Citation
Liou, J. J., "Reply to "Comments on 'Effects Of Using The More Accurate Intrinsic Concentration On Bipolar-Transistor Modeling' "" (1991). Faculty Bibliography 1990s. 275.
https://stars.library.ucf.edu/facultybib1990/275
Comments
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