Simulation of silicon carbide power MOSFETs at high temperature
Abbreviated Journal Title
DEPOSITION; DEVICES; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Numerical device simulations have been performed on SiC vertical power MOSFETs at high temperatures using ISE-TCAD device simulator. The same device structure and temperatures were used for 6H- and 4H-SiC SiC materials for the device simulation. All the parameters used in the simulation for SiC were obtained from the recently reported values. (C) 1998 Elsevier Science Ltd. All rights reserved.
"Simulation of silicon carbide power MOSFETs at high temperature" (1999). Faculty Bibliography 1990s. 2845.