Nonlinear Polarization Switching Near Half The Band-Gap In Semiconductors

    Authors

    C. C. Yang; A. Villeneuve; G. I. Stegeman; C. H. Lin; H. H. Lin;I. P. Chiou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Opt. Lett.

    Keywords

    FIBERS; Optics

    Abstract

    Experimental results of nonlinear polarization switching based on the phenomenon of power-dependent polarization evolution in an AlGaAs strip-loaded waveguide are reported. At 1550 nm, an input peak intensity of 28 GW/cm2 (before the waveguide) results in 30% power switching in a 2-cm-long waveguide. Numerical studies show that we can make the nonlinear switching more efficient by using the nonlinear anisotropy in a multiple-quantum-well waveguide.

    Journal Title

    Optics Letters

    Volume

    18

    Issue/Number

    18

    Publication Date

    1-1-1993

    Document Type

    Article

    Language

    English

    First Page

    1487

    Last Page

    1489

    WOS Identifier

    WOS:A1993LW88500003

    ISSN

    0146-9592

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