Numerical-Simulation Of Current-Voltage Characteristics Of Silicon Photoconductive Circuit Elements

    Authors

    H. Shakouri;J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Int. J. Numer. Model.-Electron. Netw. Device Fields

    Keywords

    Engineering, Electrical & Electronic; Mathematics, Interdisciplinary; Applications

    Abstract

    Photoconductive circuit elements (PCEs) are suitable for switching applications: they can be turned on and off rapidly, they can conduct a large current in the 'on' state when applying a laser or other optical excitation containing high energy photons exceeding the silicon band gap energy, they have a large resistance in the 'off' state when the light is off, and they can be fabricated using a simple process. We report the steady-state characteristics of PCEs simulated from a two-dimensional simulator called PISCES-2B. The effects of the conducting channel length, the resistivity of the intrinsic silicon, and the type of contact region on the performance of the PCE will be investigated and discussed. Based on the simulation results, optimal PCE device make-ups will also be suggested.

    Journal Title

    International Journal of Numerical Modelling-Electronic Networks Devices and Fields

    Volume

    6

    Issue/Number

    3

    Publication Date

    1-1-1993

    Document Type

    Article

    Language

    English

    First Page

    221

    Last Page

    231

    WOS Identifier

    WOS:A1993MG74900005

    ISSN

    0894-3370

    Share

    COinS